Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2

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Subtotal (1 pack of 25 units)*

PHP472.85

(exc. VAT)

PHP529.60

(inc. VAT)

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Units
Per Unit
Per Pack*
25 - 25PHP18.914PHP472.85
50 - 100PHP18.347PHP458.68
125 - 225PHP17.246PHP431.15
250 - 475PHP15.694PHP392.35
500 +PHP13.811PHP345.28

*price indicative

Packaging Options:
RS Stock No.:
753-2832
Mfr. Part No.:
BSS127H6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

600Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Typical Gate Charge Qg @ Vgs

0.65nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

500mW

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Width

1.3 mm

Height

1mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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