Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Enhancement, 4-Pin SOT-223 BSP125H6327XTSA1

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Subtotal (1 pack of 50 units)*

PHP1,306.25

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PHP1,463.00

(inc. VAT)

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Units
Per Unit
Per Pack*
50 - 50PHP26.125PHP1,306.25
100 - 200PHP25.341PHP1,267.05
250 - 450PHP23.821PHP1,191.05
500 - 950PHP21.677PHP1,083.85
1000 +PHP19.076PHP953.80

*price indicative

Packaging Options:
RS Stock No.:
826-9276
Distrelec Article No.:
304-44-411
Mfr. Part No.:
BSP125H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

45Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.8W

Typical Gate Charge Qg @ Vgs

4.4nC

Forward Voltage Vf

0.8V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

6.5mm

Height

1.5mm

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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