Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223

RS Stock No.:: 165-5810
Mfr. Part No.:: BSP324H6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 170 mA, 400 V Enhancement, 4-Pin SOT-223

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Subtotal (1 reel of 1000 units)*

PHP23,150.00

(exc. VAT)

PHP25,930.00

(inc. VAT)

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Shipping from October 12, 2026

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Units	Per Unit	Per Reel*
1000 +	PHP23.15	PHP23,150.00

*price indicative

RS Stock No.:: 165-5810
Mfr. Part No.:: BSP324H6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	170mA
	Maximum Drain Source Voltage Vds	400V
	Series	SIPMOS
	Package Type	SOT-223
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	25Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	4.54nC
	Forward Voltage Vf	0.8V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	1.8W
	Maximum Operating Temperature	150°C
	Length	6.5mm
	Height	1.6mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 170mA
	Maximum Drain Source Voltage Vds 400V
	Series SIPMOS
	Package Type SOT-223
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 25Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 4.54nC
	Forward Voltage Vf 0.8V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 1.8W
	Maximum Operating Temperature 150°C
	Length 6.5mm
	Height 1.6mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon SIPMOS Series MOSFET, 400V Maximum Drain Source Voltage, 1.8W Maximum Power Dissipation - BSP324H6327XTSA1

This MOSFET is a high-voltage N-channel transistor designed for surface-mount power switching in demanding environments. It serves as a switching or control element in circuits that require an enhancement-mode device capable of handling substantial drain-source voltages and automotive-level qualification. The device is presented in a compact SOT-223 package suitable for board-mounted applications where thermal and electrical performance must be balanced.

Features and Benefits:

• 400V drain-source rating enables high-voltage switching applications
• 25Ω maximum Rds(on) reduces conduction losses in low-current circuits
• 170mA continuous drain current supports small-signal power tasks
• 1.8W maximum power dissipation manages moderate thermal loads
• 4.54nC typical gate charge allows faster gate transitions with less drive energy
• 0.8V forward voltage improves diode drop efficiency in switching events

Applications

• Suitable for auxiliary circuits in automotive electronics
• Ideal for high-voltage control in power-supply snubber networks
• Used with gate drivers for low-current switching stages
• Can be used for load protection in sensing modules
• Appropriate for surface-mount assemblies in compact power designs

What temperature range can it operate across?

It functions across a wide ambient span from -55°C up to 150°C for use in thermally varied installations.

How many pins and what mounting style are offered?

The device comes with four pins and is intended for surface mounting on printed circuit boards.

What gate voltage limits must be observed during design?

Gate drive must be kept within ±20V to avoid exceeding the maximum gate-source rating.

What package footprint and external sizing should designers expect?

The transistor is supplied in a SOT-223 package with overall dimensions of 6.5 x 3.5 x 1.6mm for PCB layout planning.