N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

RS Stock No.:: 354-5708
Mfr. Part No.:: BSP135H6327XTSA1
Manufacturer:: Infineon

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

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Price Each

PHP71.16

(exc. VAT)

PHP79.70

(inc. VAT)

26 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

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Units	Per Unit
1 - 9	PHP71.16
10 - 49	PHP69.03
50 - 99	PHP66.95
100 - 249	PHP64.94
250 +	PHP62.98

RS Stock No.:: 354-5708
Mfr. Part No.:: BSP135H6327XTSA1
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	120 mA
Maximum Drain Source Voltage	600 V
Series	SIPMOS®
Package Type	SOT-223
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	60 Ω
Channel Mode	Depletion
Maximum Gate Threshold Voltage	1V
Minimum Gate Threshold Voltage	2.1V
Maximum Power Dissipation	1.8 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	3.7 nC @ 5 V
Length	6.5mm
Width	3.5mm
Transistor Material	Si
Height	1.6mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 120 mA, 600 V Depletion, 3-Pin SOT-223 Infineon BSP135H6327XTSA1

Infineon SIPMOS® N-Channel MOSFETs

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