Infineon SIPMOS Type N-Channel MOSFET, 120 mA, 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1

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Packaging Options:
RS Stock No.:
354-5708
Distrelec Article No.:
302-83-876
Mfr. Part No.:
BSP135H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

120mA

Maximum Drain Source Voltage Vds

600V

Package Type

SOT-223

Series

SIPMOS

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

45Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.7nC

Maximum Power Dissipation Pd

1.8W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Width

3.5 mm

Length

6.5mm

Height

1.6mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Distrelec Product Id

302-83-876

Infineon SIPMOS® Series MOSFET, 120 mA Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP135H6327XTSA1


This MOSFET is intended for efficient switching applications, known for its high voltage handling capabilities and low power consumption profile. As a single N-channel depletion mode MOSFET, it is well-suited for various electronic applications that require compact surface mount solutions. With a maximum drain-source voltage of 600V, it is a suitable choice for automotive and power management sectors prioritising efficiency and reliability.

Features & Benefits


• Utilises SIPMOS® technology for enhanced efficiency

• Supports high voltage capacities up to 600V for operational reliability

• Low power consumption rated at 120mA improves energy efficiency

• Designed for surface mount applications, providing space-saving benefits

• ESD protection rated for 1A to safeguard sensitive circuits

• Automotive qualified under AEC-Q101, conforming to industry standards

Applications


• Suitable for power management solutions in electronic devices

• Utilised in low voltage with high voltage capabilities

• Integrated in packaging for efficient thermal management

• Used in control circuits that require robust components

What are the implications of the thermal resistance values for performance?


The thermal resistance indicates the device's heat dissipation effectiveness, ensuring it operates within safe limits during continuous use. Lower thermal resistance values can enhance performance by improving heat management, particularly in high-current applications.

Can this MOSFET handle high-frequency switching applications?


Yes, it features low gate charge characteristics, enabling efficient operation in high-frequency environments, making it suitable for a variety of modern electronic applications.

What should be considered regarding installation and compatibility?


It is important to confirm that the mounting type aligns with the circuit board design to optimise performance and avoid potential thermal management or connectivity issues.

How does the maximum power dissipation impact its application?


With a maximum power dissipation of 1.8W, it is essential to ensure that usage does not exceed this limit to prevent overheating and potential failure. Appropriate thermal management is crucial in design.

What are the limitations regarding gate-source voltage?


The gate-source voltage can range from -20V to +20V, which must be adhered to in order to maintain effective operation without damaging the device or compromising performance.

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