Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-220 IRFB3306PBF

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PHP231.28

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PHP259.04

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP115.64PHP231.28
10 - 38PHP86.12PHP172.24
40 - 98PHP84.365PHP168.73
100 - 198PHP82.61PHP165.22
200 +PHP73.365PHP146.73

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Packaging Options:
RS Stock No.:
688-6910
Mfr. Part No.:
IRFB3306PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

160A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

85nC

Maximum Power Dissipation Pd

230W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

10.66mm

Standards/Approvals

No

Width

4.82 mm

Height

9.02mm

Automotive Standard

No

Distrelec Product Id

304-35-443

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