Name: Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK
Brand: Infineon
SKU: 124-8964
Price: 53.63 PHP
Availability: OutOfStock

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	160A
	Maximum Drain Source Voltage Vds	30V
	Series	HEXFET
	Package Type	IPAK
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	3mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	135W
	Typical Gate Charge Qg @ Vgs	39nC
	Forward Voltage Vf	1V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	6.22mm
	Width	2.39 mm
	Standards/Approvals	No
	Length	6.73mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 160A
	Maximum Drain Source Voltage Vds 30V
	Series HEXFET
	Package Type IPAK
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 3mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 135W
	Typical Gate Charge Qg @ Vgs 39nC
	Forward Voltage Vf 1V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 6.22mm
	Width 2.39 mm
	Standards/Approvals No
	Length 6.73mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF

This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises Advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.

Features & Benefits

• Low on-resistance reduces power loss during operation

• High continuous drain current of 160A supports substantial loads

• Voltage range up to 30V facilitates diverse applications

• Designed with an IPAK TO-251 package for straightforward installation

• Fully characterised avalanche capabilities enhance operational reliability

Applications

• High-frequency synchronous buck converters

• Isolated DC-DC converters in industrial environments

• Computer processor power management systems

• High current power supply

How does it perform in high-temperature environments?

The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.

What is the significance of low RDS(on) for my design?

A low RDS(on) Value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.

Can it be used in Pulse applications?

Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.

What factors should I consider during installation?

It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.

Is there a need for additional components for gate control?

Incorporating gate drive circuits may be advantageous to enhance switching performance, especially in high-frequency applications.

Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin IPAK