Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin IPAK
- RS Stock No.:
- 919-4911
- Mfr. Part No.:
- IRFU9024NPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 75 units)*
PHP3,364.725
(exc. VAT)
PHP3,768.525
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 2,175 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 75 - 75 | PHP44.863 | PHP3,364.73 |
| 150 - 225 | PHP43.517 | PHP3,263.78 |
| 300 - 675 | PHP42.211 | PHP3,165.83 |
| 750 - 1425 | PHP40.945 | PHP3,070.88 |
| 1500 + | PHP39.717 | PHP2,978.78 |
*price indicative
- RS Stock No.:
- 919-4911
- Mfr. Part No.:
- IRFU9024NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 11A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | IPAK | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 175mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Forward Voltage Vf | -1.6V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 38W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.73mm | |
| Height | 6.22mm | |
| Width | 2.39mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 11A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type IPAK | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 175mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Forward Voltage Vf -1.6V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 38W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Length 6.73mm | ||
Height 6.22mm | ||
Width 2.39mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFU9024NPBF
This P-channel MOSFET is intended for high-efficiency power management applications. It has a maximum continuous drain current of 11A and a maximum drain-source voltage of 55V, adept at handling significant loads while ensuring reliability in various operational conditions. Its through-hole mounting type allows for seamless integration into existing designs, making it a key component for professionals in automation and electronics.
Features & Benefits
• Low Rds(on) of 175mΩ enhances energy efficiency
• Maximum power dissipation of 38W supports robust performance
• Single transistor configuration simplifies design processes
• Complies with lead-free standards for environmentally conscious applications
Applications
• Suitable for power supplies and conversion circuits
• Utilised in motor control systems for effective operation
• Integrated into battery management systems for improved performance
• Applicable in automotive environments for dependable power handling
• Ideal for industrial automation equipment requiring robust performance
What is the temperature range for stable operation?
The component operates effectively within a temperature range of -55°C to +150°C, ensuring reliable performance in various environments.
How can it handle high power loads efficiently?
With a maximum power dissipation of 38W and low Rds(on) of 175mΩ, it manages high power loads with minimal energy loss.
Is it compatible with a standard PCB layout?
Yes, the through-hole mounting type is compatible with standard PCB layouts, facilitating straightforward integration.
What criteria should be considered for gate voltage?
A gate-source voltage range of -20V to +20V provides flexibility; optimum performance is achieved at 10V for effective operation.
How does it contribute to efficiency in power management?
Its low on-resistance and high current capability maximise efficiency in various power management scenarios.
Related links
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU9024NPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU5305PBF
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET -55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF
- Infineon HEXFET Type P-Channel MOSFET -55 V Enhancement, 3-Pin TO-252 IRFR9024NTRLPBF