Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF

RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Manufacturer:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 IRFR9024NTRPBF

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Subtotal (1 pack of 20 units)*

PHP812.26

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PHP909.74

(inc. VAT)

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In Stock

1,060 unit(s) ready to ship from another location
Plus 10,300 unit(s) shipping from January 02, 2026

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Units	Per Unit	Per Pack*
20 - 20	PHP40.613	PHP812.26
40 - 80	PHP39.395	PHP787.90
100 - 180	PHP38.213	PHP764.26
200 - 380	PHP37.068	PHP741.36
400 +	PHP35.956	PHP719.12

*price indicative

RS Stock No.:: 827-4088
Mfr. Part No.:: IRFR9024NTRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	11A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	175mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.6V
	Typical Gate Charge Qg @ Vgs	19nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	38W
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	2.39mm
	Length	6.73mm
	Width	6.22 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 11A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 175mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.6V
	Typical Gate Charge Qg @ Vgs 19nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 38W
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 2.39mm
	Length 6.73mm
	Width 6.22 mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 11A Maximum Continuous Drain Current, 38W Maximum Power Dissipation - IRFR9024NTRPBF

This P-channel MOSFET, utilising HEXFET technology, delivers efficient performance across a range of electronic applications. Its robust attributes make it a Crucial component for users in automation, electronics, as well as the electrical and mechanical sectors. The product is adept at managing high current loads while ensuring effective control in power circuits.

Features & Benefits

• Maximum continuous drain current of 11A facilitates high-performance applications

• Can withstand drain-source voltage of up to 55V for increased reliability

• Low RDS(on) of 175 mΩ minimises power loss during operation

• Enhancement mode design optimises efficiency for various uses

• DPAK TO-252 surface mount package simplifies PCB integration and assembly

Applications

• Effective energy management in power supply circuits

• Suitable for motor control needing high current

• Utilised in DC-DC converters for improved efficiency

• Ideal for load switching due to Rapid response times

• Employed in industrial automation systems for added reliability

What is the maximum power dissipation of this component?

It has a maximum power dissipation capability of 38W.

How does the product handle gate voltages?

The gate can accommodate voltages ranging from -20 V to +20 V, allowing design flexibility.

What is the thermal performance of the device?

It operates safely at a maximum temperature of 150 °C, ensuring reliability in diverse environments.

Is it easy to mount on a PCB?

Yes, the DPAK TO-252 package enables straightforward surface mounting on printed circuit boards.

How does this MOSFET perform under varying temperatures?

It remains functional within a wide temperature range of -55 °C to +150 °C, catering to diverse application needs.