Infineon HEXFET Type N-Channel MOSFET, 11 A, 55 V Enhancement, 3-Pin TO-252 AUIRFR9024NTRL

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Subtotal (1 pack of 10 units)*

PHP1,230.38

(exc. VAT)

PHP1,378.03

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP123.038PHP1,230.38
20 - 90PHP112.743PHP1,127.43
100 - 240PHP104.109PHP1,041.09
250 - 490PHP96.638PHP966.38
500 +PHP93.982PHP939.82

*price indicative

Packaging Options:
RS Stock No.:
222-4616
Mfr. Part No.:
AUIRFR9024NTRL
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

11A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

HEXFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.18mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.6V

Typical Gate Charge Qg @ Vgs

19nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

38W

Maximum Operating Temperature

150°C

Length

6.22mm

Standards/Approvals

No

Height

2.39mm

Automotive Standard

No

The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Advanced process technology

Ultra-low on-resistance Fast switching

Lead-Free, RoHS Compliant

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