N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK Infineon IRLU8743PBF

RS Stock No.:: 495-760
Mfr. Part No.:: IRLU8743PBF
Manufacturer:: Infineon

N-Channel MOSFET, 160 A, 30 V, 3-Pin IPAK Infineon IRLU8743PBF

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Subtotal (1 pack of 5 units)**

PHP446.88

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PHP500.51

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Units	Per Unit	Per Pack**
5 - 20	PHP89.376	PHP446.88
25 - 95	PHP86.694	PHP433.47
100 - 245	PHP84.092	PHP420.46
250 - 495	PHP81.57	PHP407.85
500 +	PHP79.126	PHP395.63

**price indicative

RS Stock No.:: 495-760
Mfr. Part No.:: IRLU8743PBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLU8743PBF

This MOSFET is an enhancement mode device designed for efficient switching applications. It utilises advanced technology to perform well in high-frequency operations, making it suitable for power management in various industrial scenarios. With impressive specifications, it effectively manages significant current loads while maintaining low resistance, ensuring performance in various conditions.

Features & Benefits

• Low on-resistance reduces power loss during operation
• High continuous drain current of 160A supports substantial loads
• Voltage range up to 30V facilitates diverse applications
• Designed with an IPAK TO-251 package for straightforward installation
• Fully characterised avalanche capabilities enhance operational reliability

Applications

• High-frequency synchronous buck converters
• Isolated DC-DC converters in industrial environments
• Computer processor power management systems
• High current power supply

How does it perform in high-temperature environments?

The device operates within a temperature range of -55°C to +175°C, ensuring consistent performance in extreme conditions.

What is the significance of low RDS(on) for my design?

A low RDS(on) value minimises conduction losses, promoting efficient energy use and effective thermal management, which is essential for high-current applications.

Can it be used in pulse applications?

Yes, its design supports pulsed current handling, making it suitable for various applications requiring transient response.

What factors should I consider during installation?

It is important to ensure proper thermal management and verify compatibility with the circuit's voltage and current specifications to optimise performance.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	160 A
Maximum Drain Source Voltage	30 V
Package Type	IPAK (TO-251)
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	135 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	2.39mm
Typical Gate Charge @ Vgs	39 nC @ 4.5 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Transistor Material	Si
Number of Elements per Chip	1
Forward Diode Voltage	1V
Height	6.22mm
Minimum Operating Temperature	-55 °C