Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247 IRFP1405PBF

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Subtotal (1 tube of 25 units)*

PHP2,597.00

(exc. VAT)

PHP2,908.75

(inc. VAT)

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Per Tube*
25 +PHP103.88PHP2,597.00

*price indicative

RS Stock No.:
165-8165
Mfr. Part No.:
IRFP1405PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

160A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

5.3mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

310W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

120nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

15.29mm

Standards/Approvals

No

Width

19.71 mm

Height

5.31mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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