Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 5 units)*
PHP885.92
(exc. VAT)
PHP992.23
(inc. VAT)
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In Stock
- 20 unit(s) ready to ship from another location
- Plus 180 unit(s) shipping from January 01, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP177.184 | PHP885.92 |
| 25 - 120 | PHP171.87 | PHP859.35 |
| 125 - 245 | PHP166.712 | PHP833.56 |
| 250 - 620 | PHP161.712 | PHP808.56 |
| 625 + | PHP156.862 | PHP784.31 |
*price indicative
- RS Stock No.:
- 907-4996
- Mfr. Part No.:
- IRFP1405PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 310W | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.29mm | |
| Standards/Approvals | No | |
| Width | 19.71 mm | |
| Height | 5.31mm | |
| Distrelec Product Id | 304-44-460 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 310W | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Length 15.29mm | ||
Standards/Approvals No | ||
Width 19.71 mm | ||
Height 5.31mm | ||
Distrelec Product Id 304-44-460 | ||
Automotive Standard No | ||
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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