Infineon HEXFET Type N-Channel MOSFET, 350 A, 40 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

PHP6,042.00

(exc. VAT)

PHP6,767.00

(inc. VAT)

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25 +PHP241.68PHP6,042.00

*price indicative

RS Stock No.:
165-7610
Mfr. Part No.:
IRFP4004PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

350A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-247

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

2mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

220nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

380W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Height

20.7mm

Length

15.87mm

Standards/Approvals

No

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
MX

N-Channel Power MOSFET 40V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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