Infineon HEXFET Type N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247

RS Stock No.:: 919-4892
Mfr. Part No.:: IRFP054NPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 81 A, 55 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

PHP2,707.50

(exc. VAT)

PHP3,032.50

(inc. VAT)

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In Stock

25 unit(s) ready to ship from another location

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Units	Per Unit	Per Tube*
25 - 25	PHP108.30	PHP2,707.50
50 - 75	PHP105.051	PHP2,626.28
100 - 225	PHP101.899	PHP2,547.48
250 - 475	PHP98.842	PHP2,471.05
500 +	PHP95.877	PHP2,396.93

*price indicative

RS Stock No.:: 919-4892
Mfr. Part No.:: IRFP054NPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	81A
	Maximum Drain Source Voltage Vds	55V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	12mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	130nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	170W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	20.3mm
	Length	15.9mm
	Width	5.3 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 81A
	Maximum Drain Source Voltage Vds 55V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 12mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 130nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 170W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 20.3mm
	Length 15.9mm
	Width 5.3 mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 81A Maximum Continuous Drain Current, 170W Maximum Power Dissipation - IRFP054NPBF

This MOSFET provides a robust solution for high-speed performance and efficient power management. With its N-channel configuration, the device ensures dependable operation across various electronic circuits. It accommodates continuous drain currents up to 81A and has a voltage rating of 55V, making it a notable choice for professionals in the automation, electronics, and mechanical sectors.

Features & Benefits

• Maximum continuous drain current of 81A supports high-performance applications

• Low on-resistance of 12mΩ contributes to improved efficiency

• Wide gate threshold voltage range allows for versatile circuit designs

• High power dissipation capability of 170W ensures long-lasting operation

• Compact TO-247AC package simplifies installation

Applications

• Used in power conversion and motor control systems

• Integral to power supply and amplifier circuits

• Applicable in renewable energy systems for efficient switching

• Suitable for automotive , enhancing performance resilience

What is the maximum power dissipation capability of this device?

The maximum power dissipation is rated at 170W, allowing it to manage substantial loads effectively.

How does the gate threshold voltage affect operation?

The gate threshold voltage ranges from 2V to 4V, which enables compatibility with various circuit designs and ensures efficient operation within specified parameters.

Can this MOSFET be used in high-temperature environments?

Yes, it operates within a temperature range of -55°C to +175°C, making it suitable for challenging thermal conditions.

What are the benefits of using a low RDS(on)?

A low RDS(on) of 12mΩ reduces heat generation and enhances efficiency, critical for high-performance applications.

Is it easy to install in existing electronic systems?

The TO-247AC package type is designed for through-hole mounting, making it straightforward to install in various applications.