Infineon HEXFET Type N-Channel MOSFET, 160 A, 30 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 830-3394
- Mfr. Part No.:
- IRLR8743TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP662.00
(exc. VAT)
PHP741.40
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 20 unit(s) shipping from August 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP66.20 | PHP662.00 |
| 20 - 40 | PHP58.832 | PHP588.32 |
| 50 - 90 | PHP53.434 | PHP534.34 |
| 100 - 190 | PHP50.268 | PHP502.68 |
| 200 + | PHP46.469 | PHP464.69 |
*price indicative
- RS Stock No.:
- 830-3394
- Mfr. Part No.:
- IRLR8743TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Power Dissipation Pd | 135W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.39mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Power Dissipation Pd 135W | ||
Maximum Operating Temperature 175°C | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.39mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF
This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliAbility in power management. Its Ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.
Features & Benefits
• Handles a maximum continuous drain current of 160A for solid performance
• Offers a maximum drain-source voltage of 30V for dependable operation
• Low Rds(on) Value of 3.9mΩ minimises power losses
• Designed as an enhancement mode transistor to improve switching efficiency
• Surface mount capabilities allow for easy integration into circuit designs
• Rated for high operating temperatures up to +175°C for improved thermal management
Applications
• High frequency synchronous buck converters in computer power supplies
• Isolated DC-DC converters in telecom systems
• Industrial power management and automation systems
• Devices requiring low gate threshold voltages for efficient switching
• Various electronic devices that demand a Compact power solution
What is the impact of high temperatures on its performance?
Operating at elevated temperatures enhances its thermal performance, allowing it to manage high power levels effectively while ensuring stability in difficult conditions.
How does this technology improve efficiency in electronic devices?
The HEXFET technology significantly reduces power losses due to its low Rds(on), allowing devices to operate efficiently under high loads while generating less heat.
Can it be used in conjunction with other semiconductors?
Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.
What is the significance of its surface mount design?
The surface mount design supports Compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.
N-Channel Power MOSFET 30V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin TO-252 IRLR8743TRPBF
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type N-Channel MOSFET 30 V Enhancement, 3-Pin IPAK IRLU8743PBF
- Infineon HEXFET Type N-Channel MOSFET 100 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-252