Infineon HEXFET Type N-Channel MOSFET, 8.7 A, 100 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 215-2596
- Mfr. Part No.:
- IRFR120ZTRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 2000 units)*
PHP33,174.00
(exc. VAT)
PHP37,154.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 8,000 unit(s), ready to ship from another location
Units | Per Unit | Per Reel* |
|---|---|---|
| 2000 - 2000 | PHP16.587 | PHP33,174.00 |
| 4000 - 4000 | PHP15.949 | PHP31,898.00 |
| 6000 + | PHP15.747 | PHP31,494.00 |
*price indicative
- RS Stock No.:
- 215-2596
- Mfr. Part No.:
- IRFR120ZTRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 190mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 35W | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 190mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 35W | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon HEXFET® Power MOSFET series utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead free
Related links
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