Infineon HEXFET Type N-Channel MOSFET, 71 A, 60 V Enhancement, 3-Pin TO-252

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PHP45,724.00

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PHP51,210.00

(inc. VAT)

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2000 +PHP22.862PHP45,724.00

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RS Stock No.:
168-6003
Mfr. Part No.:
IRFR7546TRPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

71A

Maximum Drain Source Voltage Vds

60V

Series

HEXFET

Package Type

TO-252

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.9mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

99W

Typical Gate Charge Qg @ Vgs

58nC

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

6.73mm

Standards/Approvals

No

Width

2.39 mm

Height

6.22mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 71A Maximum Continuous Drain Current, 99W Maximum Power Dissipation - IRFR7546TRPBF


This high-performance MOSFET is engineered for various applications that require efficient power management. With robust specifications, it is well-suited for scenarios demanding durability and highcurrent capabilities. It is commonly used in automation and electrical applications, showcasing exceptional performance characteristics across different environments.

Features & Benefits


• Maximum continuous drain current of 71A

• Rated for a maximum drain-source voltage of 60V

• Low on-resistance enhances efficiency in power delivery

• DPAK package designed for ease of surface mounting

• High power dissipation capability improves thermal management

• Enhancement mode operation optimises switching performance

Applications


• Suitable for brushed motor drive

• Useful in battery-powered circuit designs

• Employed in half-bridge and full-bridge topologies

• Effective in synchronous rectifier

• Applied in DC/DC and AC/DC power conversion systems

What is the thermal specification for continuous operation?


It supports a maximum power dissipation of 99W, ensuring efficient operation without overheating under suitable conditions.

How does it perform in high-temperature environments?


The device operates efficiently up to a maximum junction temperature of +175°C, making it applicable in challenging situations.

What mounting options are available for installation?


It features a surface mount design in a DPAK package, allowing for straightforward integration onto PCBs while saving space.

Is there a limitation on the gate voltage?


Yes, the gate-to-source voltage must not exceed ±20V to ensure safe operating conditions.

What measures enhance its reliability during operation?


Ruggedness is improved through avalanche and dynamic dV/dt protection features, ensuring dependable performance in various conditions.

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