Infineon IQE Type N-Channel MOSFET, 310 A, 25 V Enhancement, 24-Pin TSDSO IQE006NE2LM5CGSCATMA1
- RS Stock No.:
- 260-1073
- Mfr. Part No.:
- IQE006NE2LM5CGSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP324.58
(exc. VAT)
PHP363.52
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- 5,950 left, ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP162.29 | PHP324.58 |
| 10 - 98 | PHP146.18 | PHP292.36 |
| 100 - 248 | PHP131.505 | PHP263.01 |
| 250 - 498 | PHP118.27 | PHP236.54 |
| 500 + | PHP106.475 | PHP212.95 |
*price indicative
- RS Stock No.:
- 260-1073
- Mfr. Part No.:
- IQE006NE2LM5CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Package Type | TSDSO | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 24 | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 25V | ||
Package Type TSDSO | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 24 | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon MOSFETs allows the source potential to be connected to the PCB over the thermal pad which offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. It also have the reduced active cooling requirements and the effective layout for thermal management which are benefits at the system level.
Enabling highest power density and performance
Superior thermal performance
Optimized layout possibilities
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