Infineon IQE N-Channel MOSFET, 310 A, 25 V Enhancement, 24-Pin TSDSO IQE006NE2LM5CGSCATMA1

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Subtotal (1 pack of 2 units)*

PHP462.58

(exc. VAT)

PHP518.08

(inc. VAT)

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  • 5,950 unit(s) ready to ship from another location
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Units
Per Unit
Per Pack*
2 - 8PHP231.29PHP462.58
10 - 98PHP208.33PHP416.66
100 - 248PHP187.42PHP374.84
250 - 498PHP168.56PHP337.12
500 +PHP151.75PHP303.50

*price indicative

Packaging Options:
RS Stock No.:
260-1073
Mfr. Part No.:
IQE006NE2LM5CGSCATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

N

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

25V

Series

IQE

Package Type

TSDSO

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

0.75mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

+150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon MOSFETs allows the source potential to be connected to the PCB over the thermal pad which offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. It also have the reduced active cooling requirements and the effective layout for thermal management which are benefits at the system level.

Enabling highest power density and performance

Superior thermal performance

Optimized layout possibilities

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