Infineon IQE N-Channel MOSFET, 205 A, 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- RS Stock No.:
- 260-1077
- Mfr. Part No.:
- IQE013N04LM6CGSCATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 2 units)*
PHP438.98
(exc. VAT)
PHP491.66
(inc. VAT)
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- Shipping from October 06, 2027
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP219.49 | PHP438.98 |
| 10 - 98 | PHP197.615 | PHP395.23 |
| 100 - 248 | PHP177.86 | PHP355.72 |
| 250 - 498 | PHP159.86 | PHP319.72 |
| 500 + | PHP143.975 | PHP287.95 |
*price indicative
- RS Stock No.:
- 260-1077
- Mfr. Part No.:
- IQE013N04LM6CGSCATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 205A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | IQE | |
| Package Type | WHTFN | |
| Mount Type | Surface | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 1.35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series IQE | ||
Package Type WHTFN | ||
Mount Type Surface | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 1.35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon MOSFETs allows the source potential to be connected to the PCB over the thermal pad which offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. It also have the reduced active cooling requirements and the effective layout for thermal management which are benefits at the system level.
Enabling highest power density and performance
Superior thermal performance
Optimized layout possibilities
Related links
- Infineon IQE N-Channel MOSFET 40 V Enhancement, 9-Pin WHTFN
- Infineon IQE N-Channel MOSFET 40 V Enhancement, 8-Pin WHSON
- Infineon IQE N-Channel MOSFET 40 V Enhancement, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon IQE N-Channel MOSFET 40 V TTFN
- Infineon IQE N-Channel MOSFET 40 V TTFN IQE013N04LM6CGATMA1
- Infineon IQE N-Channel MOSFET, 205 A TSON
- Infineon IQE N-Channel MOSFET, 205 A TSON IQE013N04LM6ATMA1
- Infineon IQE N-Channel MOSFET 25 V Enhancement, 8-Pin WHSON