Infineon IQE Type N-Channel MOSFET, 205 A TSON IQE013N04LM6ATMA1

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Subtotal (1 pack of 2 units)*

PHP238.34

(exc. VAT)

PHP266.94

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP119.17PHP238.34
10 - 98PHP115.595PHP231.19
100 - 248PHP108.66PHP217.32
250 - 498PHP98.88PHP197.76
500 +PHP87.015PHP174.03

*price indicative

Packaging Options:
RS Stock No.:
258-3921
Mfr. Part No.:
IQE013N04LM6ATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

205A

Package Type

TSON

Series

IQE

Mount Type

Surface

Maximum Drain Source Resistance Rds

35mΩ

Forward Voltage Vf

1V

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power-MOSFET is best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.

superior thermal performance in RthJC

Optimized layout possibilities

Standard and centre-gate footprint

High current capability

More efficient use of PCB area

Highest power density and performance

Optimized footprint for MOSFET parallelization with Centre-Gate

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