Infineon IQE Type N-Channel MOSFET, 205 A TSON
- RS Stock No.:
- 258-3920
- Mfr. Part No.:
- IQE013N04LM6ATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 reel of 5000 units)*
PHP324,065.00
(exc. VAT)
PHP362,955.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from August 03, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP64.813 | PHP324,065.00 |
| 10000 - 10000 | PHP62.868 | PHP314,340.00 |
| 15000 + | PHP60.354 | PHP301,770.00 |
*price indicative
- RS Stock No.:
- 258-3920
- Mfr. Part No.:
- IQE013N04LM6ATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 205A | |
| Series | IQE | |
| Package Type | TSON | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 35mΩ | |
| Forward Voltage Vf | 1V | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 205A | ||
Series IQE | ||
Package Type TSON | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 35mΩ | ||
Forward Voltage Vf 1V | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon OptiMOS power-MOSFET is best-in-class power MOSFET optimizes the end user experience by challenging the status quo in power density and form factor. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling a more ergonomic design. Moving the inverter from the handle into the head minimizes the volume of the power tool motor housing while simultaneously keeping the torque of the tool at a reasonably high level for quick and easy action.
superior thermal performance in RthJC
Optimized layout possibilities
Standard and centre-gate footprint
High current capability
More efficient use of PCB area
Highest power density and performance
Optimized footprint for MOSFET parallelization with Centre-Gate
Related links
- Infineon IQE Type N-Channel MOSFET, 205 A TSON IQE013N04LM6ATMA1
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- Infineon IQE Type N-Channel MOSFET 40 V TTFN
- Infineon IQE Type N-Channel MOSFET 40 V Enhancement, 9-Pin WHTFN IQE013N04LM6CGSCATMA1
- Infineon IQE Type N-Channel MOSFET 40 V Enhancement, 8-Pin WHSON IQE013N04LM6SCATMA1
- Infineon IQE Type N-Channel MOSFET 40 V TTFN IQE013N04LM6CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN