Infineon IQE Type N-Channel MOSFET, 205 A, 40 V TTFN IQE013N04LM6CGATMA1

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Subtotal (1 pack of 2 units)*

PHP250.88

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PHP280.98

(inc. VAT)

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Units
Per Unit
Per Pack*
2 - 8PHP125.44PHP250.88
10 - 98PHP121.68PHP243.36
100 - 248PHP116.815PHP233.63
250 - 498PHP110.975PHP221.95
500 +PHP104.315PHP208.63

*price indicative

Packaging Options:
RS Stock No.:
258-3923
Mfr. Part No.:
IQE013N04LM6CGATMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

205A

Maximum Drain Source Voltage Vds

40V

Series

IQE

Package Type

TTFN

Mount Type

Surface

Forward Voltage Vf

1V

Standards/Approvals

No

Automotive Standard

No

The Infineon OptiMOS power MOSFET 40V in a 3.3x3.3 PQFN Source-Down Centre-Gate package. This best-in-class power MOSFET challenges the status quo in power density and form factor in the end application. One target in power tool design is to minimize the internal restrictions of PCB area requirements, enabling an ergonomic design and optimizing the end user experience. Moving the inverter from the handle into the head simultaneously minimizes the volume of the power tool motor housing while keeping the torque of the tool at a reasonably high level for quick and easy action.

High current capability

More efficient use of PBC area

Highest power density and performance

Optimized footprint for MOSFET parallelization with centre-gate

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