IXYS Single GigaMOS, HiperFET 1 Type N-Channel MOSFET, 132 A, 250 V Enhancement, 24-Pin SMPD MMIX1F180N25T

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Subtotal (1 unit)*

PHP3,320.75

(exc. VAT)

PHP3,719.24

(inc. VAT)

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Units
Per Unit
1 - 9PHP3,320.75
10 - 49PHP3,254.58
50 - 99PHP3,189.29
100 - 249PHP3,126.74
250 +PHP3,063.29

*price indicative

Packaging Options:
RS Stock No.:
875-2481
Mfr. Part No.:
MMIX1F180N25T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

132A

Maximum Drain Source Voltage Vds

250V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface Mount

Pin Count

24

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

570W

Minimum Operating Temperature

-55°C

Transistor Configuration

Single

Maximum Operating Temperature

150°C

Width

23.25 mm

Height

5.7mm

Length

25.25mm

Number of Elements per Chip

1

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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