N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

RS Stock No.:: 168-4794
Mfr. Part No.:: MMIX1T550N055T2
Manufacturer:: IXYS

N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

This image is representative of the product range

Price Each (In a Tube of 20)**

PHP2,368.023

(exc. VAT)

PHP2,652.186

(inc. VAT)

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FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tube**
20 +	PHP2,368.023	PHP47,360.46

**price indicative

RS Stock No.:: 168-4794
Mfr. Part No.:: MMIX1T550N055T2
Manufacturer:: IXYS

MMIX1T550N055T2, TrenchT2 GigaMOS Power MOSFET N-Channel 55V 550A SMPD
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	550 A
Maximum Drain Source Voltage	55 V
Package Type	SMPD
Series	GigaMOS, HiperFET
Mounting Type	Surface Mount
Pin Count	24
Maximum Drain Source Resistance	1.3 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	3.8V
Maximum Power Dissipation	830 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	23.25mm
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	595 nC @ 10 V
Length	25.25mm
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.2V
Height	5.7mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 550 A, 55 V, 24-Pin SMPD IXYS MMIX1T550N055T2

FREE delivery for over PHP7,000.00 (ex VAT)

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series

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