IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

PHP35,664.14

(exc. VAT)

PHP39,943.84

(inc. VAT)

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  • 70 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
10 +PHP3,566.414PHP35,664.14

*price indicative

RS Stock No.:
168-4578
Mfr. Part No.:
IXFN360N15T2
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

310A

Maximum Drain Source Voltage Vds

150V

Package Type

SOT-227

Series

GigaMOS TrenchT2 HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

4mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

715nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1.07kW

Maximum Operating Temperature

175°C

Length

38.23mm

Standards/Approvals

No

Height

9.6mm

Width

25.07 mm

Automotive Standard

No

COO (Country of Origin):
PH

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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