IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 420 A, 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T

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Subtotal (1 unit)*

PHP1,741.85

(exc. VAT)

PHP1,950.87

(inc. VAT)

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Per Unit
1 - 1PHP1,741.85
2 - 4PHP1,689.61
5 - 9PHP1,638.92
10 - 19PHP1,589.74
20 +PHP1,542.05

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RS Stock No.:
125-8043
Mfr. Part No.:
IXFN420N10T
Manufacturer:
IXYS
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Brand

IXYS

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

420A

Maximum Drain Source Voltage Vds

100V

Series

GigaMOS Trench HiperFET

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

670nC

Maximum Power Dissipation Pd

1.07kW

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

38.23mm

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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