IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
- RS Stock No.:
- 125-8042
- Distrelec Article No.:
- 302-53-371
- Mfr. Part No.:
- IXFN360N15T2
- Manufacturer:
- IXYS
This image is representative of the product range
Bulk discount available
Subtotal (1 unit)*
PHP3,980.02
(exc. VAT)
PHP4,457.62
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1 unit(s) ready to ship from another location
- Plus 77 unit(s) shipping from January 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit |
|---|---|
| 1 - 1 | PHP3,980.02 |
| 2 - 4 | PHP3,900.42 |
| 5 - 9 | PHP3,822.42 |
| 10 - 14 | PHP3,745.98 |
| 15 + | PHP3,671.06 |
*price indicative
- RS Stock No.:
- 125-8042
- Distrelec Article No.:
- 302-53-371
- Mfr. Part No.:
- IXFN360N15T2
- Manufacturer:
- IXYS
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 310A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-227 | |
| Series | GigaMOS TrenchT2 HiperFET | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 715nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 1.07kW | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 38.23mm | |
| Height | 9.6mm | |
| Width | 25.07 mm | |
| Automotive Standard | No | |
| Distrelec Product Id | 30253371 | |
| Select all | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 310A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-227 | ||
Series GigaMOS TrenchT2 HiperFET | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 715nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 1.07kW | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 38.23mm | ||
Height 9.6mm | ||
Width 25.07 mm | ||
Automotive Standard No | ||
Distrelec Product Id 30253371 | ||
- COO (Country of Origin):
- PH
N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Related links
- IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET 150 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
- IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET 100 V Enhancement, 4-Pin SOT-227 IXFN420N10T
- IXYS HiperFET Type N-Channel MOSFET 1 kV Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227
- IXYS HiperFET Type N-Channel MOSFET 850 V Enhancement, 4-Pin SOT-227