IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

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Subtotal (1 unit)*

PHP1,656.48

(exc. VAT)

PHP1,855.26

(inc. VAT)

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  • Plus 63 unit(s) shipping from June 08, 2026
  • Plus 845 unit(s) shipping from June 15, 2026
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Per Unit
1 - 1PHP1,656.48
2 - 4PHP1,606.78
5 - 9PHP1,558.58
10 - 19PHP1,511.81
20 +PHP1,466.45

*price indicative

RS Stock No.:
125-8041
Distrelec Article No.:
302-53-370
Mfr. Part No.:
IXFN360N10T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

525nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Length

38.23mm

Height

9.6mm

Standards/Approvals

No

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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