IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227

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Subtotal (1 tube of 10 units)*

PHP13,507.67

(exc. VAT)

PHP15,128.59

(inc. VAT)

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  • 1,240 unit(s) ready to ship from another location
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Units
Per Unit
Per Tube*
10 +PHP1,350.767PHP13,507.67

*price indicative

RS Stock No.:
168-4577
Mfr. Part No.:
IXFN360N10T
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

360A

Maximum Drain Source Voltage Vds

100V

Package Type

SOT-227

Series

GigaMOS Trench HiperFET

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

2.6mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

525nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

830W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

25.07 mm

Height

9.6mm

Length

38.23mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


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