IXYS GigaMOS, HiperFET N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD

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Subtotal 10 units (supplied in a tube)*

PHP26,177.30

(exc. VAT)

PHP29,318.60

(inc. VAT)

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  • 93 unit(s) ready to ship from another location
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Units
Per Unit
10 - 49PHP2,617.73
50 - 99PHP2,539.19
100 - 249PHP2,463.00
250 +PHP2,389.13

*price indicative

Packaging Options:
RS Stock No.:
875-2475P
Mfr. Part No.:
MMIX1T600N04T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

600A

Maximum Drain Source Voltage Vds

40V

Series

GigaMOS, HiperFET

Package Type

SMPD

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

590nC

Maximum Operating Temperature

175°C

Width

23.25mm

Height

5.7mm

Standards/Approvals

No

Length

25.25mm

Automotive Standard

No

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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