IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD

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Subtotal (1 tube of 20 units)*

PHP33,658.68

(exc. VAT)

PHP37,697.72

(inc. VAT)

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  • Plus 80 unit(s) shipping from March 02, 2026
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Units
Per Unit
Per Tube*
20 +PHP1,682.934PHP33,658.68

*price indicative

RS Stock No.:
168-4791
Mfr. Part No.:
MMIX1T600N04T2
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

600A

Maximum Drain Source Voltage Vds

40V

Package Type

SMPD

Series

GigaMOS, HiperFET

Mount Type

Surface

Pin Count

24

Maximum Drain Source Resistance Rds

1.3mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

590nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

830W

Maximum Operating Temperature

175°C

Length

25.25mm

Height

5.7mm

Width

23.25 mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
DE

N-channel Power MOSFET, IXYS HiperFET™ GigaMOS™ Series


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