Vishay Type N-Channel MOSFET, 101 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW

This image is representative of the product range

Bulk discount available

Subtotal (1 reel of 3000 units)*

PHP94,407.00

(exc. VAT)

PHP105,735.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from May 25, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 - 6000PHP31.469PHP94,407.00
9000 +PHP29.266PHP87,798.00

*price indicative

RS Stock No.:
252-0317
Mfr. Part No.:
SQS141ELNW-T1_GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

192W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

94nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

3.3 mm

Length

6.15mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

Related links