Vishay Type N-Channel MOSFET, 110 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS142ELNW-T1_GE3

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Subtotal (1 pack of 10 units)*

PHP375.25

(exc. VAT)

PHP420.28

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP37.525PHP375.25
50 - 90PHP33.772PHP337.72
100 - 240PHP30.394PHP303.94
250 - 990PHP27.354PHP273.54
1000 +PHP24.619PHP246.19

*price indicative

Packaging Options:
RS Stock No.:
252-0320
Mfr. Part No.:
SQS142ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

192W

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.1V

Typical Gate Charge Qg @ Vgs

94nC

Maximum Operating Temperature

175°C

Length

6.15mm

Standards/Approvals

No

Width

3.3 mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile


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