Vishay Type N-Channel MOSFET, 110 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW

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Subtotal (1 reel of 3000 units)*

PHP86,574.00

(exc. VAT)

PHP96,963.00

(inc. VAT)

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Units
Per Unit
Per Reel*
3000 - 6000PHP28.858PHP86,574.00
9000 +PHP26.838PHP80,514.00

*price indicative

RS Stock No.:
252-0319
Mfr. Part No.:
SQS142ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

94nC

Maximum Power Dissipation Pd

192W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.15mm

Width

3.3 mm

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile


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