Vishay Type N-Channel MOSFET, 101 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS141ELNW-T1_GE3

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PHP552.24

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PHP618.51

(inc. VAT)

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Per Unit
Per Pack*
10 - 40PHP55.224PHP552.24
50 - 90PHP53.568PHP535.68
100 - 240PHP50.354PHP503.54
250 - 990PHP45.822PHP458.22
1000 +PHP40.323PHP403.23

*price indicative

Packaging Options:
RS Stock No.:
252-0318
Mfr. Part No.:
SQS141ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

101A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

94nC

Maximum Power Dissipation Pd

192W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

3.3 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

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