Vishay Type N-Channel MOSFET, 141 A, -40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS160ELNW-T1_GE3

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Subtotal (1 pack of 10 units)*

PHP467.40

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PHP523.50

(inc. VAT)

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Units
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Per Pack*
10 - 40PHP46.74PHP467.40
50 - 90PHP45.338PHP453.38
100 - 240PHP42.617PHP426.17
250 - 990PHP38.781PHP387.81
1000 +PHP34.128PHP341.28

*price indicative

Packaging Options:
RS Stock No.:
252-0322
Mfr. Part No.:
SQS160ELNW-T1_GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

141A

Maximum Drain Source Voltage Vds

-40V

Package Type

PowerPAK 1212-8SLW

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.01mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

192W

Typical Gate Charge Qg @ Vgs

94nC

Forward Voltage Vf

1.1V

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Width

3.3 mm

Length

6.15mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

The Vishay automotive MOSFETs are manufactured on a dedicated process flow to in still ruggedness. Rated for a maximum junction temperature of 175 °C, the vishay siliconix AEC-Q101 qualified SQ series features low on-resistance n- and p-channel trench FET technologies in lead (Pb)- and halogen-free SO packages.

TrenchFET Gen IV power MOSFET

AEC-Q101 qualified

100 % Rg and UIS tested

Wettable flank terminals

Low thermal resistance with 0.75 mm profile

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