Vishay TrenchFET Type N-Channel MOSFET, 9.5 A, 80 V Enhancement, 8-Pin SO-8 SI4896DY-T1-E3
- RS Stock No.:
- 180-7296
- Mfr. Part No.:
- SI4896DY-T1-E3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 reel of 2500 units)*
PHP226,855.00
(exc. VAT)
PHP254,077.50
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- Shipping from September 27, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | PHP90.742 | PHP226,855.00 |
| 5000 - 7500 | PHP90.404 | PHP226,010.00 |
| 10000 + | PHP89.389 | PHP223,472.50 |
*price indicative
- RS Stock No.:
- 180-7296
- Mfr. Part No.:
- SI4896DY-T1-E3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.5A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | TrenchFET | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 34nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 1.56W | |
| Maximum Operating Temperature | 150°C | |
| Width | 6.2mm | |
| Length | 5mm | |
| Standards/Approvals | No | |
| Height | 1.75mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.5A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series TrenchFET | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 34nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 1.56W | ||
Maximum Operating Temperature 150°C | ||
Width 6.2mm | ||
Length 5mm | ||
Standards/Approvals No | ||
Height 1.75mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 80V and a maximum gate-source voltage of 20V. It has drain-source resistance of 16.5mohm at a gate-source voltage of 10V. It has power dissipation of 1.56W and continuous drain current of 6.7A. The minimum and a maximum driving voltage for this MOSFET is 6V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Lead (Pb) free
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• Adaptor switch
• Load switches
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• IEC 61249-2-21
Related links
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