Vishay TrenchFET Type N-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin SO-8 SiR880BDP-T1-RE3

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Subtotal (1 pack of 10 units)*

PHP639.16

(exc. VAT)

PHP715.86

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 40PHP63.916PHP639.16
50 - 90PHP61.999PHP619.99
100 - 240PHP58.279PHP582.79
250 - 990PHP53.034PHP530.34
1000 +PHP46.67PHP466.70

*price indicative

Packaging Options:
RS Stock No.:
228-2914
Mfr. Part No.:
SiR880BDP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

6.5mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

43.5nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

71.4W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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