Vishay TrenchFET Type N-Channel MOSFET, 146 A, 80 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 3000 units)*

PHP176,223.00

(exc. VAT)

PHP197,370.00

(inc. VAT)

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  • 3,000 unit(s) ready to ship from another location
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Units
Per Unit
Per Reel*
3000 - 3000PHP58.741PHP176,223.00
6000 - 6000PHP56.987PHP170,961.00
9000 +PHP55.234PHP165,702.00

*price indicative

RS Stock No.:
228-2907
Mfr. Part No.:
SiR580DP-T1-RE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

146A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

2.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

104W

Typical Gate Charge Qg @ Vgs

50.6nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET N-channel is 80 V MOSFET.

100 % Rg and UIS tested

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