Vishay TrenchFET N channel-Channel MOSFET, 70.6 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS586DN-T1-UE3

N
Bulk discount available

Subtotal (1 unit)*

PHP86.99

(exc. VAT)

PHP97.43

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from April 12, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
1 - 9PHP86.99
10 - 24PHP56.54
25 - 99PHP29.58
100 +PHP28.71

*price indicative

RS Stock No.:
735-242
Mfr. Part No.:
SISS586DN-T1-UE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

70.6A

Maximum Drain Source Voltage Vds

80V

Series

TrenchFET

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0085Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

65.7W

Typical Gate Charge Qg @ Vgs

19.5nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3 mm

Standards/Approvals

RoHS Compliant

Automotive Standard

No

COO (Country of Origin):
DE
The Vishay N channel MOSFET is designed for efficient power switching in a wide range of electronic applications. it delivers reliable performance with thorough gate resistance and unclamped inductive switching testing, ensuring robust operation under demanding conditions. the device supports environmentally responsible designs with RoHS compliant and halogen free construction, making it suitable for modern power management systems.

Supports high reliability operation in demanding environments

Suitable for synchronous rectification applications

Ideal for use as a primary side switch in power converters

Meets RoHS compliant and halogen free requirements

Related links