Vishay SISS26DN N channel-Channel MOSFET, 60 A, 60 V Enhancement, 8-Pin PowerPAK 1212-8S SISS26DN-T1-UE3

N
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Subtotal (1 tape of 1 unit)*

PHP147.89

(exc. VAT)

PHP165.64

(inc. VAT)

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Tape(s)
Per Tape
1 - 9PHP147.89
10 - 24PHP96.56
25 - 99PHP50.46
100 - 499PHP48.72
500 +PHP47.85

*price indicative

RS Stock No.:
736-351
Mfr. Part No.:
SISS26DN-T1-UE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

60V

Series

SISS26DN

Package Type

PowerPAK 1212-8S

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.0045Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Typical Gate Charge Qg @ Vgs

24.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.1V

Maximum Power Dissipation Pd

57W

Maximum Operating Temperature

150°C

Length

3.3mm

Width

3.3mm

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for power management applications, featuring robust specifications and efficient operation tailored for demanding electronic environments.

TrenchFET Gen IV technology ensures superior performance and efficiency

Capable of handling a maximum drain-source voltage of 60 V

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