Vishay SISS30DN N channel-Channel MOSFET, 54.7 A, 80 V Enhancement, 8-Pin PowerPAK 1212-8S SISS30DN-T1-BE3

N
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Subtotal (1 tape of 1 unit)*

PHP93.95

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PHP105.22

(inc. VAT)

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Tape(s)
Per Tape
1 - 9PHP93.95
10 - 24PHP60.89
25 - 99PHP32.19
100 - 499PHP31.32
500 +PHP30.45

*price indicative

RS Stock No.:
736-352
Mfr. Part No.:
SISS30DN-T1-BE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

54.7A

Maximum Drain Source Voltage Vds

80V

Package Type

PowerPAK 1212-8S

Series

SISS30DN

Mount Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance Rds

0.00825Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

26nC

Maximum Power Dissipation Pd

57W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Length

3.3mm

Standards/Approvals

RoHS

Width

3.3mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay N-Channel MOSFET designed for efficient synchronous rectification and power conversion applications. It delivers excellent performance stability in demanding environments.

TrenchFET Gen IV technology enhances electrical efficiency

Very low on-resistance minimises energy losses during operation

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