Vishay TrenchFET Type N-Channel Power MOSFET, 5.3 A, 60 V Enhancement, 8-Pin SO-8

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Subtotal (1 reel of 2500 units)*

PHP88,737.50

(exc. VAT)

PHP99,385.00

(inc. VAT)

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Units
Per Unit
Per Reel*
2500 - 2500PHP35.495PHP88,737.50
5000 +PHP34.936PHP87,340.00

*price indicative

RS Stock No.:
180-7298
Mfr. Part No.:
SI4900DY-T1-E3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

5.3A

Maximum Drain Source Voltage Vds

60V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.058Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

3.1W

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

13nC

Maximum Operating Temperature

150°C

Length

4.8mm

Height

1.35mm

Standards/Approvals

IEC 61249-2-21

Width

4 mm

Automotive Standard

No

The Vishay Siliconix SI4900DY series TrenchFET dual N channel power MOSFET has drain to source voltage of 60 V. It is used in LCD TV and CCFL inverter.

Pb-free

Halogen free

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