ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

RS Stock No.:: 687-465
Mfr. Part No.:: RD3L08DBKHRBTL
Manufacturer:: ROHM

ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

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Subtotal (1 tape of 2 units)*

PHP141.80

(exc. VAT)

PHP158.82

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from January 19, 2026

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Units	Per Unit	Per Tape*
2 - 18	PHP70.90	PHP141.80
20 - 48	PHP62.635	PHP125.27
50 - 198	PHP56.11	PHP112.22
200 - 998	PHP45.235	PHP90.47
1000 +	PHP44.365	PHP88.73

*price indicative

RS Stock No.:: 687-465
Mfr. Part No.:: RD3L08DBKHRBTL
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type N
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252 (TL)
	Series	RD3L08DBKHRB
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	7.5mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	22nC
	Maximum Gate Source Voltage Vgs	±20 V
	Maximum Power Dissipation Pd	76W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Height	2.3mm
	Length	10.50mm
	Width	6.8 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type N
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252 (TL)
	Series RD3L08DBKHRB
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 7.5mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 22nC
	Maximum Gate Source Voltage Vgs ±20 V
	Maximum Power Dissipation Pd 76W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Height 2.3mm
	Length 10.50mm
	Width 6.8 mm
	Automotive Standard AEC-Q101

Datasheet - RD3L08DBKHRBTL

COO (Country of Origin):: JP

The ROHM Power MOSFET is engineered for high-performance in demanding applications, offering reliable switching capabilities with low on-resistance and a robust breakdown voltage. Designed to handle up to 80A of continuous drain current and with a maximum drain-source voltage of 60V, this component ensures efficiency and durability. It is ideal for automotive electronics, lighting, and other power management systems, featuring Pb-free plating and is AEC-Q101 qualified, making it compliant with the latest industry standards. This MOSFET provides a combination of exceptional thermal performance and reliability, making it a suitable choice for engineers seeking to optimise their circuit designs.

Low on resistance of 7.5mΩ maximises power efficiency

AEC Q101 qualification ensures high reliability in automotive applications

Passes 100% avalanche testing for enhanced durability

Capable of handling continuous drain current up to 80A

Maximum drain-source voltage rating of 60V provides substantial overhead

Pb free plating adheres to RoHS compliance, promoting environmental responsibility

Versatile packaging ensures compatibility across various application designs

Ideal for use in ADAS, info systems, and body control applications

Features low gate charge characteristics for faster switching times

ROHM RD3L08DBKHRB Type N-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08DBKHRBTL

FREE delivery for orders over ₱3,000.00

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