ROHM AG086FGD3HRB Type N-Channel Single MOSFETs, 80 A, 40 V Enhancement, 3-Pin TO-252 (TL) AG086FGD3HRBTL
- RS Stock No.:
- 687-456
- Mfr. Part No.:
- AG086FGD3HRBTL
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 2 units)*
PHP147.02
(exc. VAT)
PHP164.66
(inc. VAT)
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- Shipping from January 20, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP73.51 | PHP147.02 |
| 20 - 48 | PHP64.81 | PHP129.62 |
| 50 - 198 | PHP58.285 | PHP116.57 |
| 200 - 998 | PHP46.975 | PHP93.95 |
| 1000 + | PHP45.67 | PHP91.34 |
*price indicative
- RS Stock No.:
- 687-456
- Mfr. Part No.:
- AG086FGD3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | AG086FGD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 76W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.80 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Length | 10.50mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series AG086FGD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 76W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.80 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Length 10.50mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance applications, featuring a robust construction that ensures reliability and efficiency. With a maximum drain-source voltage of 40V and capable of handling continuous currents up to 80A, this device is an optimal solution for automotive systems and other demanding environments. Its low on-resistance of just 4.1mΩ facilitates minimal power loss during operation, making it particularly beneficial for power management tasks. Fully AEC-Q101 qualified, this MOSFET meets stringent automotive standards, ensuring consistent quality for demanding applications. The product supports efficient heat dissipation, allowing for a maximum power dissipation of 76W while maintaining a wide operational temperature range.
Low on resistance of 4.1mΩ enhances energy efficiency
AEC Q101 qualification assures automotive-grade reliability
Maximum continuous drain current of 80A caters to high load applications
Pulsed drain current capability reaches 160A for transient load handling
Supports gate-source voltage of ±20V for flexible control
Avalanche rated for increased operational safety
Thermal resistance specification aids in efficient heat management
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