ROHM AG194FPD3HRB Type N-Channel Single MOSFETs, 100 V Enhancement, 3-Pin TO-252 (TL) AG194FPD3HRBTL
- RS Stock No.:
- 687-353
- Mfr. Part No.:
- AG194FPD3HRBTL
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 2 units)*
PHP292.29
(exc. VAT)
PHP327.364
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP146.145 | PHP292.29 |
| 20 - 98 | PHP128.75 | PHP257.50 |
| 100 - 198 | PHP115.70 | PHP231.40 |
| 200 + | PHP90.905 | PHP181.81 |
*price indicative
- RS Stock No.:
- 687-353
- Mfr. Part No.:
- AG194FPD3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | AG194FPD3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 142W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds 100V | ||
Series AG194FPD3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 142W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM N channel power MOSFET designed for applications requiring robust power management. Operating at a maximum of 100V and capable of handling continuous currents up to 80A, this component excels in delivering low on-resistance, thus minimising power loss in demanding automotive systems. Its Pb-free plating and compliance with RoHS standards ensure both environmental safety and reliability. Notably, the device is fully qualified under AEC-Q101, making it suitable for automotive applications where performance and resilience are critical. With a power dissipation capability of 142W and stringent avalanche testing, this MOSFET supports reliable operation in a variety of high-performance circuits.
Offers a low on resistance of 6.2mΩ for improved efficiency
Rated for continuous drain current of 80A, suitable for high-power applications
Features a breakdown voltage of 100V providing robustness against voltage spikes
AEC Q101 qualified, ensuring reliability in automotive environments
Avalanche tested, allowing for safe operation under transient conditions
Pb free and RoHS compliant, aligning with environmental standards
Ideal for automotive systems, enhancing power management capabilities
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