ROHM AG191FLD3HRB Type N-Channel Single MOSFETs, 80 A, 60 V Enhancement, 3-Pin TO-252 (TL) AG191FLD3HRBTL
- RS Stock No.:
- 687-454
- Mfr. Part No.:
- AG191FLD3HRBTL
- Manufacturer:
- ROHM
N
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Subtotal (1 tape of 2 units)*
PHP148.76
(exc. VAT)
PHP166.62
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP74.38 | PHP148.76 |
| 20 - 48 | PHP65.68 | PHP131.36 |
| 50 - 198 | PHP58.72 | PHP117.44 |
| 200 - 998 | PHP47.41 | PHP94.82 |
| 1000 + | PHP46.54 | PHP93.08 |
*price indicative
- RS Stock No.:
- 687-454
- Mfr. Part No.:
- AG191FLD3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | AG191FLD3HRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 76W | |
| Typical Gate Charge Qg @ Vgs | 22nC | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Length | 10.50mm | |
| Width | 6.80 mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series AG191FLD3HRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 76W | ||
Typical Gate Charge Qg @ Vgs 22nC | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Length 10.50mm | ||
Width 6.80 mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET is engineered for high-performance applications, providing exceptional efficiency with a maximum Drain-Source voltage of 60V and a continuous drain current of 80A. Designed for demanding automotive systems, this device features low on-resistance, ensuring reduced power loss and enhanced thermal management. Its robust construction includes AEC-Q101 qualification, making it suitable for use in rigorous automotive environments. With a multidimensional thermal resistance capability, this MOSFET effectively handles thermal stress, ensuring reliability under varying operational conditions. Ideal for engineers seeking a reliable component in high-efficiency applications, the AG191FLD3HRB stands out for its performance and operational integrity.
Low on resistance offers improved efficiency and reduces heat generation
Pb free plating conforms to RoHS standards for environmental safety
100% avalanche testing guarantees reliable performance under stress
AEC Q101 qualified, ensuring compliance with automotive industry standards
Supports a wide operating junction and storage temperature range from -55°C to 175°C
Flexible packaging specifications with tape and reel format for convenience in assembly
Integrated thermal resistance minimizes thermal concerns during operation
Supplied with precise gate charge characteristics for optimal switching performance
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