ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL
- RS Stock No.:
- 687-358
- Mfr. Part No.:
- RD3L08BBJHRBTL
- Manufacturer:
- ROHM
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PHP271.08
(exc. VAT)
PHP303.60
(inc. VAT)
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In Stock
- Plus 96 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP135.54 | PHP271.08 |
| 20 - 48 | PHP119.405 | PHP238.81 |
| 50 - 198 | PHP107.415 | PHP214.83 |
| 200 - 998 | PHP86.205 | PHP172.41 |
| 1000 + | PHP84.365 | PHP168.73 |
*price indicative
- RS Stock No.:
- 687-358
- Mfr. Part No.:
- RD3L08BBJHRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-252 (TL) | |
| Series | RD3L08BBJHRB | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 10.7mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 5V | |
| Typical Gate Charge Qg @ Vgs | 145nC | |
| Maximum Power Dissipation Pd | 142W | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.3mm | |
| Width | 6.8mm | |
| Length | 10.5mm | |
| Standards/Approvals | RoHS, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-252 (TL) | ||
Series RD3L08BBJHRB | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 10.7mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 5V | ||
Typical Gate Charge Qg @ Vgs 145nC | ||
Maximum Power Dissipation Pd 142W | ||
Maximum Operating Temperature 175°C | ||
Height 2.3mm | ||
Width 6.8mm | ||
Length 10.5mm | ||
Standards/Approvals RoHS, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.
Optimized for efficiency with low on-state resistance, ensuring reduced power loss
Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C
Suitable for high-current applications with a continuous drain current capability of ±80A
AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards
Embossed tape packaging facilitates automated assembly processes
Fully avalanche rated, guaranteeing reliable operation under transient conditions
Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components
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