ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

RS Stock No.:: 687-358
Mfr. Part No.:: RD3L08BBJHRBTL
Manufacturer:: ROHM

ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

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Subtotal (1 tape of 2 units)*

PHP255.76

(exc. VAT)

PHP286.46

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from January 19, 2026

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Units	Per Unit	Per Tape*
2 - 18	PHP127.88	PHP255.76
20 - 48	PHP112.655	PHP225.31
50 - 198	PHP101.345	PHP202.69
200 - 998	PHP81.335	PHP162.67
1000 +	PHP79.60	PHP159.20

*price indicative

RS Stock No.:: 687-358
Mfr. Part No.:: RD3L08BBJHRBTL
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	60V
	Series	RD3L08BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	10.7mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Power Dissipation Pd	142W
	Typical Gate Charge Qg @ Vgs	145nC
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Length	10.50mm
	Standards/Approvals	RoHS, AEC-Q101
	Width	6.8 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds 60V
	Series RD3L08BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 10.7mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Power Dissipation Pd 142W
	Typical Gate Charge Qg @ Vgs 145nC
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Length 10.50mm
	Standards/Approvals RoHS, AEC-Q101
	Width 6.8 mm
	Automotive Standard AEC-Q101

Datasheet - RD3L08BBJHRBTL

COO (Country of Origin):: JP

The ROHM P channel MOSFET designed for demanding applications requiring robust power management. With a maximum voltage rating of -60V and current capability of ±80A, this device is suitable for automotive and industrial use. Constructed in a TO-252 package, it ensures efficient thermal performance with a power dissipation of up to 142W. The low on-resistance of 10.7mΩ enhances power efficiency, making it an ideal choice for energy-conscious designs. Additionally, it is 100% avalanche tested and AEC-Q101 qualified, ensuring reliability in critical applications.

Optimized for efficiency with low on-state resistance, ensuring reduced power loss

Robust thermal performance allows operation in demanding environments with a maximum junction temperature of 175°C

Suitable for high-current applications with a continuous drain current capability of ±80A

AEC Q101 qualified for automotive applications, ensuring compliance with rigorous quality standards

Embossed tape packaging facilitates automated assembly processes

Fully avalanche rated, guaranteeing reliable operation under transient conditions

Pb free plating and RoHS compliant, meeting environmental standards for modern electronic components

ROHM RD3L08BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L08BBJHRBTL

FREE delivery for orders over ₱3,000.00

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