ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL

RS Stock No.:: 687-468
Mfr. Part No.:: RD3L04BBJHRBTL
Manufacturer:: ROHM

ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL

This image is representative of the product range

Bulk discount available

Subtotal (1 tape of 2 units)*

PHP138.32

(exc. VAT)

PHP154.92

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from January 19, 2026

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Units	Per Unit	Per Tape*
2 - 18	PHP69.16	PHP138.32
20 - 48	PHP60.895	PHP121.79
50 - 198	PHP54.805	PHP109.61
200 - 998	PHP44.365	PHP88.73
1000 +	PHP43.06	PHP86.12

*price indicative

RS Stock No.:: 687-468
Mfr. Part No.:: RD3L04BBJHRBTL
Manufacturer:: ROHM

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	ROHM
	Channel Type	Type P
	Product Type	Single MOSFETs
	Maximum Drain Source Voltage Vds	60V
	Series	RD3L04BBJHRB
	Package Type	TO-252 (TL)
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	30mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	48nC
	Maximum Power Dissipation Pd	77W
	Maximum Gate Source Voltage Vgs	5 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	AEC-Q101, RoHS
	Width	6.8 mm
	Height	2.3mm
	Length	10.50mm
	Automotive Standard	AEC-Q101

	Select all
	Brand ROHM
	Channel Type Type P
	Product Type Single MOSFETs
	Maximum Drain Source Voltage Vds 60V
	Series RD3L04BBJHRB
	Package Type TO-252 (TL)
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 30mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 48nC
	Maximum Power Dissipation Pd 77W
	Maximum Gate Source Voltage Vgs 5 V
	Maximum Operating Temperature 175°C
	Standards/Approvals AEC-Q101, RoHS
	Width 6.8 mm
	Height 2.3mm
	Length 10.50mm
	Automotive Standard AEC-Q101

Datasheet - RD3L04BBJHRBTL

COO (Country of Origin):: JP

The ROHM P channel power MOSFET designed for efficient switching in automotive and industrial applications. Capable of withstanding a drain-source voltage of -60V and maximum continuous drain current of ±48A, this component ensures reliable performance under demanding conditions. With a low on-resistance of 30mΩ, it optimises power loss, thereby increasing overall system efficiency. The product is also AEC-Q101 qualified and 100% avalanche tested, making it an ideal choice for critical applications where reliability is paramount.

Low on resistance promotes energy efficiency

AEC Q101 qualification ensures high reliability in automotive applications

100% avalanche testing provides assurance of performance under stress

Compatible with a wide temperature range from -55°C to 175°C for versatile usage

Avalanche energy capability of 34.9 mJ enhances robustness under dynamic conditions

Complete electrical characteristics at 25°C allow precise application in designs

Embossed packaging guarantees secure and efficient storage and handling

Optimised for various applications, including ADAS, infotainment, and lighting

ROHM RD3L04BBJHRB Type P-Channel Single MOSFETs, 60 V Enhancement, 3-Pin TO-252 (TL) RD3L04BBJHRBTL

FREE delivery for orders over ₱3,000.00

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