ROHM AG502EED3HRB Type P-Channel Single MOSFETs, -30 V Enhancement, 3-Pin TO-252 (TL) AG502EED3HRBTL
- RS Stock No.:
- 687-467
- Mfr. Part No.:
- AG502EED3HRBTL
- Manufacturer:
- ROHM
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Subtotal (1 tape of 2 units)*
PHP140.06
(exc. VAT)
PHP156.86
(inc. VAT)
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- Shipping from January 19, 2026
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Units | Per Unit | Per Tape* |
|---|---|---|
| 2 - 18 | PHP70.03 | PHP140.06 |
| 20 - 48 | PHP61.765 | PHP123.53 |
| 50 - 198 | PHP55.24 | PHP110.48 |
| 200 - 998 | PHP44.80 | PHP89.60 |
| 1000 + | PHP43.495 | PHP86.99 |
*price indicative
- RS Stock No.:
- 687-467
- Mfr. Part No.:
- AG502EED3HRBTL
- Manufacturer:
- ROHM
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Drain Source Voltage Vds | -30V | |
| Series | AG502EED3HRB | |
| Package Type | TO-252 (TL) | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 8.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 5 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 77W | |
| Typical Gate Charge Qg @ Vgs | 52nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.50mm | |
| Height | 2.3mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Width | 6.80 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Drain Source Voltage Vds -30V | ||
Series AG502EED3HRB | ||
Package Type TO-252 (TL) | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 8.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 5 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 77W | ||
Typical Gate Charge Qg @ Vgs 52nC | ||
Maximum Operating Temperature 175°C | ||
Length 10.50mm | ||
Height 2.3mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Width 6.80 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- JP
The ROHM Power MOSFET designed for efficient and reliable energy management in automotive systems. Featuring a maximum drain-source voltage of -30V and continuous drain current capability of up to 78A, this device is ideal for demanding applications requiring robust power handling. Its low on-resistance of 8.5mΩ minimises power loss, contributing to enhanced thermal efficiency. Additionally, the MOSFET is qualified under AEC-Q101 standards, ensuring it meets rigorous automotive requirements for durability and performance. With excellent avalanche characteristics and a wide operational temperature range, the AG502EED3HRB ensures consistent performance under diverse conditions.
Robust construction with AEC Q101 qualification for automotive applications
Low on resistance of 8.5mΩ, optimising energy efficiency
Max continuous drain current of 78A enables handling of demanding loads
Wide operating temperature range from -55°C to 175°C for reliable performance
Thermal resistance of 1.94°C/W enhances heat dissipation capabilities
100% Avalanche tested, ensuring high reliability under transient conditions
Pb free plating and compliance with RoHS standards for environmentally-friendly design
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